P-780 Miniature Piezo Flexure NanoPositioners

  • Extremely Compact
  • 80 µm Range
  • Resolution < 10 nm
  • Fast Response (1 kHz Resonant Frequency)

 

P-780 Piezo Flexure Stages are extremely compact and fast devices, providing a positioning and scanning range of up to 80 µm with settling time of only a few milliseconds. The P-780 is designed for applications with loads up to 100 grams. Both open loop and closed loop versions with integrated LVDT (Linear Variable Differential Transformer) feedback sensors are offered to suit your application.

Application examples:
Metrology, nanopositioning, scanning microscopy, disk drive testing, fiber optics, scanning interferometry, bio-technology, micromanipulation etc.

Working principle:
P-780 is equipped with a low voltage piezoelectric drive (0 to 100 V) integrated into a sophisticated flexure guiding system. The force exerted by the piezo drive pushes a multi-flexure parallelogram via an integrated motion amplifier. The wire EDM (Electric Discharge Machining) cut flexures are FEA (Finite Element Analysis) modeled for zero stiction/friction, ultra-high resolution and exceptional guiding precision. An integrated LVDT position feed- back sensor provides nanometer scale resolution and stability in closed loop operation (with PI electronics recommended below).

Ordering Information:

  • P-780.00 Miniature PZT Flexure Stage, 80 µm
  • P-780.20 Miniature PZT Flexure Stage, 80 µm, LVDT Sensor

 

 

TECHNICAL DATA:

Models

P-780.00

P-780.20

Units

Notes

Active axes

X

X

  

Open loop travel @ 0 to 100 V

80

80

µm ± 20 %

A2

Closed loop travel ³

-

80

µm

A5

Integrated feedback sensor

-

LVDT

 

B

Closed / open loop ** resolution £

- / 1

10 / 1

nm

C1

Closed loop linearity (typ.)

-

0.1

%

 

Full range repeatability (typ.)

-

±20

nm

C3

Stiffness

1.5

1.5

N/µm ± 20 %

D1

Push/pull force capacity
(in operating direction)

50 / 5

50 / 5

N

D3

Max. (+/-) normal load

1

1

kg

D4

Lateral force limit

10

10

N

D5

Lateral runout (X/Y/Z) (typ.)

10

10

nm

E2

Electrical capacitance

3.6

3.6

µF ± 20 %

F1

* Dynamic operating current coefficient
(DOCC)

5.6

5.6

µA/(Hz x µm)

F2

Unloaded resonant frequency

1000

1000

Hz ± 20 %

G2

Resonant frequency @ 100 g load

600

600

Hz ± 20 %

G3

Operating temperature range

- 20 to 80

- 20 to 80

° C

H2

Voltage connection

VL

VL

 

J1

Sensor connection

-

L

 

J2

Weight (with cables)

150

170

g ± 5 %

 

Body material

N-S

N-S

 

L

Recommended Amplifier/Controller

G, C

H, E

 

M

* Dynamic Operating Current Coefficient in µA per Hertz and µm.
Example: Sinusoidal scan of 30 µm at 10 Hz requires approximately 1.7 mA drive current.

** Noise equivalent motion with E-503 amplifier.

This is a legacy product that may have limited availability or may have been replaced. Ask a PI engineer for an equivalent new model.

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