- Precision Trajectory Control
- For XY Scanning and Positioning
- 200 x 200 mm Clear Aperture
- 200 x 200 µm Range
- Resolution < 10 nm
P-770 is a low profile XY nanopositioning stage for high precision, high speed scanning and positioning. Providing a precision motion range 200 x 200 µm with nanometer resolution. P-770 was specially designed for semiconductor inspection systems.
The 200 x 200 mm clear aperture is ideal for all transmitted light applications such as mask alignment.
Application Examples
Metrology, nanopositioning, semiconductor test equipment, precision mask and wafer alignment, scanning interferometry, surface structure analysis, etc.
More on Long Travel High Precision Motorized XY Translation Stages
Working Principle
P-770 xy linear translation nanopositioning stages are equipped with low voltage piezoelectric drives (0 to 100 V) integrated into a sophisticated flexure guiding system. The force exerted by the piezo drive pushes a multi-flexure parallelogram via an integrated motion amplifier. The wire EDM (Electric Discharge Machining) cut flexures are FEA (Finite Element Analysis) modeled for zero stiction/friction, ultra-high resolution and exceptional guiding precision. Integrated LVDT (Linear Variable Differential Transformer) position feedback sensors provide high resolution and stability in closed loop operation (with PI electronics recommended below).
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Ordering Information:
P-770.00 Large Aperture XY PZT Flexure Stage, 200 µm, LVDT Sensor
See "PZT Control Electronics" section for our comprehensive line of low noise, modular and OEM control electronics for computer and manual control.
| TECHNICAL DATA: | |||
Models | P-770.00 | Units | |
Active axes | X,Y | ||
Open loop travel @ 0 to 100 V | 200 | µm ± 20 % | A2 |
Closed loop travel ³ | 200 | µm | A5 |
Integrated feedback sensor | LVDT | B | |
Closed / open loop ** resolution £ | 10 / 2 | nm | C1 |
Closed loop linearity (typ.) | 0.1 | % | |
Full range repeatability (typ.) | ±20 | nm | C3 |
Stiffness | 0.2 | N/µm ± 20 % | D1 |
Push/pull force capacity | 50 / 10 | N | D3 |
Max. (+/-) normal load | 2 | kg | D4 |
Electrical capacitance | 14.4 / axis | µF ± 20 % | F1 |
* Dynamic operating current | 12 / axis | µA/(Hz x µm) | F2 |
Unloaded resonant frequency | 90 | Hz ± 20 % | G2 |
Operating temperature range | - 20 to 80 | ° C | H2 |
Voltage connection *** | D | J1 | |
Sensor connection *** | D | J2 | |
Weight | 2000 | g ± 5 % | |
Body material | Al | L | |
Recommended Amplifier/Controller | H, F | M | |
* Dynamic Operating Current Coefficient in µA per Hertz and µm.
Example: Sinusoidal scan of 50 µm at 10 Hz requires approximately 6 mA drive current.
** Noise equivalent motion with E-503 amplifier.
*** Adapter cable with LEMO connectors for sensor and operating voltage included.
This is a legacy product that may have limited availability or may have been replaced. Ask a PI engineer for an equivalent new model.